(PDF) PE507BA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PE507BA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE507BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID -28A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Tc = 25 °C -28 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID -18 -10 Pulsed Drain Current1 TA= 70 °C IDM -8 -50 Avalanche Current IAS -42 Avalanche Energy L =0.1mH EAS 87 TC = 25 °C 16 Power Dissipation TC = 100 °C TA = 25 °C PD 6 2 TA = 70 °C 1.3 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 Junction-to-Case RqJC 7.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 22A. UNITS °C / W REV 1.1 1 2015/3/24 1 page PE507BA P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2015/3/24 5 Page

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PDF PE507BA Data sheet ( Hoja de datos )