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Número de pieza | PE618BA | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PE618BA (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! PE618BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
40A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
40
25
100
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
12
10
Avalanche Current
IAS 30
Avalanche Energy
L =0.1mH
EAS
46
TC = 25 °C
17.8
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
7
1.6
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
77
Junction-to-Case
RqJC
7
1Pulse width limited by maximum junction temperature.
2Package limitation current is 22A
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0 1 2014/8/8
1 page PE618BA
N-Channel Enhancement Mode MOSFET
REV 1.0 5 2014/8/8
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet PE618BA.PDF ] |
Número de pieza | Descripción | Fabricantes |
PE618BA | N-Channel Enhancement Mode MOSFET | UNIKC |
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