(PDF) PA210HK Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	PA210HK
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PA210HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VGS = 10V ID 8.7A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C 8.7 ID 5.5 IDM 25 Continuous Drain Current TA = 25 °C TA = 70 °C 2.8 ID 2.2 Avalanche Current IAS 8.7 Avalanche Energy L = 1mH EAS 37.8 Power Dissipation TC = 25 °C TC = 100 °C 20 PD 8 Power Dissipation TA = 25 °C TA = 70 °C 2.1 PD 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 58 Junction-to-Case RqJC 6.2 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.1 1 2016/8/16 1 page PA210HK Dual N-Channel Enhancement Mode MOSFET REV 1.1 5 2016/8/16 5 Page

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PDF PA210HK Data sheet ( Hoja de datos )