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PDF PK5G6EA Data sheet ( Hoja de datos )
| Número de pieza | PK5G6EA | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
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PK5G6EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 2.4mΩ @VGS = 10V
ID
87A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±12
Continuous Drain Current4
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
87
55
120
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
31
25
Avalanche Current
IAS 51
Avalanche Energy
L = 0.1mH
EAS
130
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4
2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
30
51
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value.
4Package limitation current is 51A.
UNITS
°C / W
REV 1.0
1 2015/10/15
1 page  
PK5G6EA
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2015/10/15
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PK5G6EA.PDF ] | |
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