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PDF PK552DX Data sheet ( Hoja de datos )
| Número de pieza | PK552DX | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
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PK552DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5.7mΩ @VGS = 4.5V
ID
56A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
56
ID 36
IDM 70
Continuous Drain Current
TA = 25 °C
TA = 70 °C
17
ID 14
Avalanche Current
IAS 40
Avalanche Energy
L = 0.1mH
EAS 79
Power Dissipation
TC = 25 °C
TC = 100 °C
31
PD 12.5
Power Dissipation
TA = 25 °C
TA = 70 °C
2.9
PD 1.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
4
Junction-to-Ambient2
RqJA
43
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 22A.
UNITS
°C / W
REV 1.0
1 2014/7/10
1 page  
PK552DX
Dual N-Channel Enhancement Mode MOSFET
*散热片形状会因为封装厂框架不同而有所差异。
REV 1.0
5
2014/7/10
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PK552DX.PDF ] | |
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