(PDF) PK636BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PK636BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PK636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 8mΩ @VGS = 10V ID 46A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 46 29 120 Continuous Drain Current TA = 25 °C TA= 70 °C ID 12 9.7 Avalanche Current IAS 20 Avalanche Energy L =0.1mH EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 30 12 Power Dissipation TA = 25 °C TA = 70 °C PD 2.1 1.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 59 Junction-to-Case RqJC 4.1 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 20A. UNITS °C / W REV 1.0 1 2014-2-20 1 page PK636BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-2-20 5 Page

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PDF PK636BA Data sheet ( Hoja de datos )