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PDF PKCH2BB Data sheet ( Hoja de datos )
| Número de pieza | PKCH2BB | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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PKCH2BB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 0.99mΩ @VGS = 10V
ID4
229A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
228
145
350
A
50
40
Avalanche Current
IAS 86
Avalanche Energy
L =0.1mH
EAS
369.8
mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
104
W
41
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
5
W
3.2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
25
40
Junction-to-Case
Steady-State
RqJC
1.2
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value
4The maximum current rating is package limited.
UNITS
°C / W
REV 1.0
1 2016/10/9
1 page  
PKCH2BB
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2016/10/9
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PKCH2BB.PDF ] | |
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