P1006BIS Datasheet PDF - UNIKC
| Part Number | P1006BIS | |
| Description | N-Channel Enhancement Mode MOSFET | |
| Manufacturers | UNIKC | |
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There is a preview and P1006BIS download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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P1006BIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID
66A
TO-251(IS)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
66
42
150
Avalanche Current
IAS 38.5
Avalanche Energy
L = 0.1mH
EAS
74
Power Dissipation
TC= 25 °C
TC= 100°C
PD
96
38
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
REV 1.0
1 2015/8/12
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P1006BIS
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2015/8/12
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P1006BIS electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P1006BIS.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| P1006BIS | The function is N-Channel Enhancement Mode MOSFET. UNIKC | |
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