(PDF) P2904BD Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P2904BD
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P2904BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 29mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA= 70 °C ID IDM 25 20 75 Avalanche Current IAS 27 Avalanche Energy2 L=0.1mH EAS 37 Power Dissipation TC= 25 °C TC= 70°C PD 30 20 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNIT 4.1 S °C / W 40 REV 1.0 1 2014/5/12 1 page P2904BD N-Channel Logic Level Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/12 5 Page

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PDF P2904BD Data sheet ( Hoja de datos )