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Datasheet PB210BD Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PB210BD | N-Channel Enhancement Mode MOSFET PB210BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID 10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Curr | UNIKC | mosfet |
2 | PB210BD | N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
PB210BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ
ID 10A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous | NIKO-SEM | transistor |
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7 | PB204M | Bridge Rectifier BRIDGE RECTIFIERS 2.0 to 8.0 Amps
SINGLE PHASE PLASTIC BRIDGE RECTIFIERS (INCLUDING GLASS PASSIVATED) RF Cross Max Avg Peak Peak Fwd Surge Max Forward Part Number Reference Rectified Inverse Current Voltage Current Voltage @ 8.3ms @ TA = 25°C Superimposed @ Rated IO IO(A) PIV(V) IFSM(A) VFM(V) 2W00 RFE rectifier | |
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Número de pieza | Descripción | Fabricantes | |
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