P0860ETFS Datasheet PDF - UNIKC
| Part Number | P0860ETFS | |
| Description | N-Channel Enhancement Mode MOSFET | |
| Manufacturers | UNIKC | |
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There is a preview and P0860ETFS download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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P0860ETF / P0860ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω @VGS = 10V
ID
8A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
8
5
25
3.5
61.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
36
14
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.4
62.5
UNITS
°C / W
REV 1.0
1 2017/1/23
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P0860ETF / P0860ETFS
N-Channel Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。
REV 1.0
5
2017/1/23
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P0860ETFS electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P0860ETFS.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| P0860ETF | The function is N-Channel Enhancement Mode MOSFET. UNIKC | |
| P0860ETF | The function is N-Channel Field Effect Transistor. NIKO-SEM |  |
| P0860ETFS | The function is N-Channel Enhancement Mode MOSFET. UNIKC | |
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