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부품번호 | P0860ETF 기능 |
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기능 | N-Channel Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F
P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω
ID
8A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
8
5
25
3.5
61.2
36
14
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
3.4
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
LIMITS
MIN TYP MAX
UNIT
600
2 2.7
4
V
±100 nA
G-18-4
NIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F
P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
Gate charge Characteristics
10
VDS=480V
8 ID=8A
6
Source-Drain Diode Forward Voltage
100
10
4
1
150℃
25℃
2
0
0 6 12 18 24 30
Qg , Total Gate Charge(nC)
Safe Operating Area
100
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
Single Pulse Maximum Power Dissipation
500
Single Pulse
400 RθJC = 3.4˚C/W
10 TC=25˚C
1
Operation in This
Area is Limited
by RDS(ON)
0.1 NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 3.4˚C/W
4.Single Pulse
0.01
10
100
1ms
10ms
100ms
DC
1000
VDS, Drain-To-Source Voltage(V)
300
200
100
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 3.4 ℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
REV 1.0
4
100
G-18-4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ P0860ETF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
P0860ETF | N-Channel Enhancement Mode MOSFET | UNIKC |
P0860ETF | N-Channel Field Effect Transistor | NIKO-SEM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |