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What is MCP6V71U?

This electronic component, produced by the manufacturer "Microchip", performs the same function as "2 MHz Zero-Drift Op Amps".


MCP6V71U Datasheet PDF - Microchip

Part Number MCP6V71U
Description 2 MHz Zero-Drift Op Amps
Manufacturers Microchip 
Logo Microchip Logo 


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MCP6V71/1U/2/4
170 µA, 2 MHz Zero-Drift Op Amps
Features
• High DC Precision:
- VOS Drift: ±15 nV/°C (maximum, VDD = 5.5V)
- VOS: ±8 µV (maximum)
- AOL: 126 dB (minimum, VDD = 5.5V)
- PSRR: 115 dB (minimum, VDD = 5.5V)
- CMRR: 117 dB (minimum, VDD = 5.5V)
- Eni: 0.45 µVP-P (typical), f = 0.1 Hz to 10 Hz
- Eni: 0.15 µVP-P (typical), f = 0.01 Hz to 1 Hz
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR) at 1.8 GHz: 96 dB
• Low Power and Supply Voltages:
- IQ: 170 µA/amplifier (typical)
- Wide Supply Voltage Range: 2V to 5.5V
• Small Packages:
- Singles in SC70, SOT-23
- Duals in MSOP-8, 2x3 TDFN
- Quads in TSSOP-14
• Easy to Use:
- Rail-to-Rail Input/Output
- Gain Bandwidth Product: 2 MHz (typical)
- Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• Portable Instrumentation
• Sensor Conditioning
• Temperature Measurement
• DC Offset Correction
• Medical Instrumentation
Design Aids
• FilterLab® Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Parts
• MCP6V11/1U/2/4: Zero-Drift, Low Power
• MCP6V31/1U/2/4
• MCP6V61/1U: Zero-Drift 1 MHz
• MCP6V81/1U: Zero-Drift, 5 MHz
MCP6V91/1U: Zero-Drift, 10 MHz
Description
The Microchip Technology Inc. MCP6V71/1U/2/4
family of operational amplifiers provides input offset
voltage correction for very low offset and offset drift.
These are low-power devices with a gain bandwidth
product of 2 MHz (typical). They are unity-gain stable,
have virtually no 1/f noise and have good Power Supply
Rejection Ratio (PSRR) and Common Mode Rejection
Ratio (CMRR). These products operate with a single
supply voltage as low as 2V, while drawing
170 µA/amplifier (typical) of quiescent current.
The MCP6V71/1U/2/4 family has enhanced EMI pro-
tection to minimize any electromagnetic interference
from external sources. This feature makes it well suited
for EMI sensitive applications such as power lines,
radio stations and mobile communications, etc.
The Microchip Technology Inc. MCP6V71/1U/2/4 op
amps are offered in single (MCP6V71 and
MCP6V71U), dual (MCP6V72) and quad (MCP6V74)
packages. They were designed using an advanced
CMOS process.
Package Types
MCP6V71
SOT-23
MCP6V72
MSOP
VOUT 1
VSS 2
VIN+ 3
5 VDD VOUTA 1
VINA– 2
4 VIN– VINA+ 3
VSS 4
8 VDD
7 VOUTB
6 VINB
5 VINB+
MCP6V71U
SC70, SOT-23
MCP6V72
2×3 TDFN *
VIN+ 1
VSS 2
VIN– 3
5 VDD VOUTA 1
8 VDD
VINA– 2
4 VOUT VINA+ 3
EP
9
7 VOUTB
6 VINB
VSS 4
5 VINB+
MCP6V74
TSSOP
VOUTA 1
VINA– 2
VINA+ 3
VDD 4
VINB+ 5
VINB– 6
VOUTB 7
14 VOUTD
13 VIND
12 VIND+
11 VSS
10 VINC+
9 VINC
8 VOUTC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2015 Microchip Technology Inc.
DS20005385B-page 1

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MCP6V71U equivalent
MCP6V71/1U/2/4
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 20 kto VL and CL = 30 pF (refer to Figure 1-4 and Figure 1-5).
Parameters
Sym. Min. Typ. Max. Units
Conditions
Amplifier AC Response
Gain Bandwidth Product
GBWP — 2 — MHz
Slew Rate
SR — 1.0 — V/µs
Phase Margin
PM — 60 —
° G = +1
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Eni — 0.15 — µVP-P f = 0.01 Hz to 1 Hz
Eni — 0.45 — µVP-P f = 0.1 Hz to 10 Hz
eni — 21 — nV/Hz f < 2 kHz
ini — 5 — fA/Hz
Amplifier Distortion (Note 1)
Intermodulation Distortion (AC) IMD — 11 — µVPK VCM tone = 100 mVPK at 1 kHz, GN = 1
Amplifier Step Response
Start Up Time
Offset Correction Settling Time
tSTR
tSTL
Output Overdrive Recovery Time tODR
— 200 —
— 15 —
— 40 —
µs G = +1, 0.1% VOUT settling (Note 2)
µs G = +1, VIN step of 2V,
VOS within 100 µV of its final value
µs G = -10, ±0.5V input overdrive to VDD/2,
VIN 50% point to VOUT 90% point (Note 3)
EMI Protection
EMI Rejection Ratio
EMIRR — 75 —
dB VIN = 0.1 VPK, f = 400 MHz
— 89 —
VIN = 0.1 VPK, f = 900 MHz
— 96 —
VIN = 0.1 VPK, f = 1800 MHz
— 98 —
VIN = 0.1 VPK, f = 2400 MHz
Note 1: These parameters were characterized using the circuit in Figure 1-6. In Figures 2-40 and 2-41, there is
an IMD tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones.
2: High gains behave differently; see Section 4.3.3, Offset at Power Up.
3: tODR includes some uncertainty due to clock edge timing.
TABLE 1-3: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2V to +5.5V, VSS = GND.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
TA -40 — +125
TA -40 — +125
°C
°C (Note 1)
Storage Temperature Range
TA -65 — +150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SC-70
JA — 209 —
°C/W
Thermal Resistance, 5L-SOT-23
JA — 201 —
°C/W
Thermal Resistance, 8L-2x3 TDFN
JA — 53 — °C/W
Thermal Resistance, 8L-MSOP
JA — 211 —
°C/W
Thermal Resistance, 14L-TSSOP
JA — 100 —
°C/W
Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
2015 Microchip Technology Inc.
DS20005385B-page 5


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