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PDF Si7111EDN Data sheet ( Hoja de datos )
| Número de pieza | Si7111EDN | |
| Descripción | P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
Si7111EDN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PowerPAK® 1212-8 Single
D
D8
D7
D6
5
3.3 mm
1
Top View
3.3 mm
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -4.5 V
RDS(on) max. () at VGS = -2.5 V
Qg typ. (nC)
ID (A)
Configuration
1
2S
3S
4S
G
Bottom View
-30
0.00855
0.01600
30.5
60 a, g
Single
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• RDS(on) rating at VGS = -2.5 V
• 100 % Rg and UIS tested
• Typical ESD protection: 4600 V HBM
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Battery switch
• Adapter and charger switch
• Load switch
G
• Battery management in mobile
devices
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8
Si7111EDN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
-30
± 12
60 a
49.3
17.4 a, b
13.9 a, b
150
47.3
3.7 a, b
20
20
52
33.3
4.1 a, b
2.6 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient a
Maximum junction-to-case (drain)
t xx s
Steady state
RthJA
RthJF
23
1.9
30
°C/W
2.4
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. TC = 25 °C.
S16-1520-Rev. A, 01-Aug-16
1
Document Number: 67807
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7111EDN
Vishay Siliconix
1000
Axis Title
10000
IDM limited
100
ID limited
10
100 μs
1000
1 ms
1 Limited by RDS(on) (1)
10 ms
100 ms100
0.1
TA = 25 °C
Single pulse
0.01
0.01 0.1
BVDSS limited
1 10
1s
10 s
DC
10
100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Axis Title
65 10000
52
1000
39
26
100
13
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
Axis Title
70 10000
Axis Title
2.0 10000
56 1.6
1000
1000
42 1.2
28 0.8
100 100
14 0.4
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1520-Rev. A, 01-Aug-16
5
Document Number: 67807
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si7111EDN.PDF ] | |
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