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Número de pieza | SJDA065R055 | |
Descripción | Normally-On Trench Silicon Carbide Power JFET | |
Fabricantes | SemiSouth | |
Logotipo | ||
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No Preview Available ! Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- RDS(on) max of 0.055 Ω
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
TO-220
Silicon Carbide
SJDA065R055
Product Summary
BVDS
RDS(on)max
650
0.055
V
Ω
D(2,4)
G(1)
S(3)
Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
Pulsed Drain Current (1)
Short Circuit Withstand Time
Power Dissipation
Gate-Source Voltage
ID, TC=25
ID, TC=100
IDM
tSC
PD
VGS
TC = 25 °C
TC = 100 °C
Tj = 25 °C
VDD < 800 V, TC < 125 °C
TC = 25 °C
AC(2)
Operating and Storage Temperature
Tj, Tstg
Lead Temperature for Soldering
Tsold
(1) Pulse width limited by maximum junction temperature
(2) Rg(EXT) = 1 Ω, tp < 200 ns, see Figure 6 for static conditions
1/8" from case < 10 s
Value
30
20
80
50
114
-15 to +15
-55 to +150
260
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
Symbol
Rth,JC
Rth,JA
Value
Typ Max
- 1.1
- 50
SJDP065R055
Rev 1.0
Unit
A
A
µs
W
V
°C
°C
Unit
°C / W
1/7
1 page Silicon Carbide
SJDA065R055
Figure 13. Switching Energy Losses
Es = f(ID); VDS = 325 V; GD = +15 V/-15 V, RGEXT = 1 Ω
400
350 Ets
300
250
200 Eoff
150
Eon
100
50
0
0 10 20 30 40 50
ID, Drain Current (A)
Figure 14. Inductive Load Switching Circuit
Single Switch Configuration
DUT =
SJDA065R055
D=
SDP20S120D
SJDP065R055
Rev 1.0
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SJDA065R055.PDF ] |
Número de pieza | Descripción | Fabricantes |
SJDA065R055 | Normally-On Trench Silicon Carbide Power JFET | SemiSouth |
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