|
|
PDF SJDP120R085 Data sheet ( Hoja de datos )
| Número de pieza | SJDP120R085 | |
| Descripción | Normally-On Trench Silicon Carbide Power JFET | |
| Fabricantes | SemiSouth | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SJDP120R085 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Silicon Carbide
SJDP120R085
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- RDS(on) typical of 0.075 Ω
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance
4
Product Summary
BVDS
RDS(ON)max
ETS,typ
1200
0.085
290
V
Ω
µJ
D(2,4)
G(1)
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
TO-247
3
2
1
S(3)
Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
Pulsed Drain Current (1)
Short Circuit Withstand Time
Power Dissipation
Gate-Source Voltage
ID, TC=25
ID, TC=100
IDM
tSC
PD
VGS
TC = 25 °C
TC = 100 °C
Tj = 25 °C
VDD < 800 V, Tj < 125 °C
TC = 25 °C
AC(2)
Operating and Storage Temperature
Tj, Tstg
Lead Temperature for Soldering
Tsold
(1) Pulse width limited by maximum junction temperature
(2) Rg(EXT) = 1 Ω, tp < 200 ns, see Figure 6 for static conditions
(3) See Figure 14 for gate driver and switching test circuit
1/8" from case < 10 s
Value
27
17
75
50
114
-15 to +15
-55 to +150
260
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
SJDP120R085
Symbol
Rth,JC
Rth,JA
Rev 3.0
Value
Typ Max
- 1.1
- 50
Unit
A
A
µs
W
V
°C
°C
Unit
°C / W
1/7
1 page  
Silicon Carbide
SJDP120R085
Figure 12. Switching Energy Losses (3)
Es = f(ID); VDS = 600 V; GD = +15 V/-15 V, Rg(EXT) = 5 Ω
800
700 Tj = 25oC
600 Tj = 150oC
Ets
500
400
300 Eon
200
100 Eoff
0
10 20 30
40
ID, Drain Current (A)
Figure 13. Switching Energy Losses (3)
Es = f(Rg(EXT)); VDS = 600 V; ID = 17 A, GD = +15 V/-15 V
800
700 Ets
600
500
400 Eoff
300 Eon
200
100
0
0 5 10 15 20 25
Rg(EXT), External Gate Resistance (Ω)
Figure 14. Inductive Load Switching Circuit
Single Switch Configuration
1.E+00 90%
70%
50%
30%
1.E-01 10%
5%
2%
1.E-02 1%
0.5%
0.2%
1.E-03
1.E-06
SJDP120R085
Figure 15. Transient Thermal Impedance
Zth(jc) = f(tP); parameter: Duty Ratio
1.E-05
1.E-04
1.E-03
tp, Pulse Width (s)
Rev 3.0
1.E-02
1.E-01
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SJDP120R085.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SJDP120R085 | Normally-On Trench Silicon Carbide Power JFET | SemiSouth |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |