|
|
|
부품번호 | RSF015N06 기능 |
|
|
기능 | MOSFET ( Transistor ) | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 7 페이지수
Data Sheet
4V Drive Nch MOSFET
RSF015N06
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (TUMT3).
3) Low voltage drive. (4V)
Application
Switching
Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : PX
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSF015N06
Taping
TL
3000
○
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
VGSS *1
20
ID *1
1.5
IDP *1
IS
6.0
0.6
ISP *1
6.0
PD *2
0.8
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
∗1
∗2
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
156
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
RSF015N06
10000
1000
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= 4.0V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
100
10
0.01
0.1 1
DRAIN-CURRENT : ID[A]
Fig.9 Source Current
vs. Sourse-Drain Voltage
10
VGS=0V
Pulsed
10
1
0.1
0.01
0
1000
100
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Switching Characteristics
td(off)
tf
Ta=25°C
VDD= 30V
VGS=10V
RG=10Ω
Pulsed
10
1
0.01
td(on)
tr
0.1 1
DRAIN-CURRENT : ID[A]
10
Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
VDS= 10V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1 1
DRAIN-CURRENT : ID[A]
10
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
600
Ta=25°C
ID= 1.5A
Pulsed
500
400 ID= 0.7A
300
200
100
0
0
5 10 15
GATE-SOURCE VOLTAGE : VGS[V]
20
Fig.12 Dynamic Input Characteristics
10
Ta=25°C
VDD= 30V
8
ID= 1.5A
RG=10Ω
Pulsed
6
4
2
0
01234
TOTAL GATE CHARGE : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.10 - Rev.A
4페이지 Notes
Notice
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ RSF015N06.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RSF015N06 | MOSFET ( Transistor ) | ROHM Semiconductor |
RSF015N06FRA | MOSFET ( Transistor ) | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |