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PDF RSJ250P10FRA Data sheet ( Hoja de datos )
| Número de pieza | RSJ250P10FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Pch MOSFET
RSJ250P10FRA
z Structure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
z Application
Switching
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
z Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ250P10 FRA
Taping
TL
1000
ۑ
z Inner circuit
∗1
∗2
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
*1
*2
*1
*2
*3
100
r20
r25
r50
25
50
50
150
Range of storage temperature
Tstg 55 to 150
*1 Limited only by maximum temperature allowed.
*2 PWᱨ10Ps, Duty cycleᱨ1%
*3 TC=25°C
Unit
V
V
A
A
A
A
W
qC
qC
z Thermal resistance
Parameter
Channel to Ambient
* TC=25°C
Symbol
Limits
Rth (ch-c)* 2.5
Unit
qC / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
ᰛ1 ESD PROTECTION DIODE
ᰛ2 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
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202101.60.606- -RReevv.A.A
1 page  
RSJ250P10 FRA
䚷
Data Sheet
100000
10000
1000
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
100
Ta=25rC
Crss
f=1MHz
VGS=0V
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS[V]
1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
1
0.1
0.01
0.001
0.0001
0.0001 0.001
Ta = 25rC
Single Pulse
Rth(ch-a)(t) = r(t)Rth(ch-a)
Rth(ch-a) = 57.9rC/W
0.01 0.1 1 10
PULSE WIDTH : Pw(s)
100 1000
1000
100
Fig.14 Maximum Safe Operating Aera
Operation in this area is limited by RDS(ON)
(VGS=10V)
PW=100us
10
PW=1ms
1 PW = 10ms
DC operation
0.1
TC = 25rC
Single Pulse
0.01
0.1 1
10 100 1000
DRAIN-SOURCE VOLTAGE : VDS[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
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