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PDF RSJ650N10 Data sheet ( Hoja de datos )
| Número de pieza | RSJ650N10 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
4V Drive Nch MOSFET
RSJ650N10
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package.
3) 4V drive.
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ650N10
Taping
TL
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
PD *2
Tch
Range of storage temperature
Tstg
Limits
100
20
65
130
65
130
100
150
55 to 150
*1 PW10s, Duty cycle1%
*2 TC=25°C
*3 Please use within the range of SOA.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol
Rth (ch-c)*
Limits
1.25
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A
1 page  
RSJ650N10
Data Sheet
Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001
0.00001
0.0001 0.001
Mounted on epoxy board.
(25mm × 27mm × 0.8mm)
Rth(ch-a)=70.2°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1
1
10 100 1000
Pulse width : Pw (s)
1000
100
Fig.14 Maximum Safe Operating Area
Operation in this area is limited by RDS(on)
(VGS = 10V)
10
PW = 300us
1
0.1 Ta=25°C
Single Pulse
Mounted on epoxy board.
(25mm × 27mm × 0.8mm)
0.01
0.1 1 10
PW = 1ms
PW = 10ms
PW = 1s
100 1000
Drain-Source Voltage : VDS [ V ]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.06 - Rev.A
5 Page | ||
| Páginas | Total 7 Páginas | |
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