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부품번호 | RSQ015P10FRA 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 13 페이지수
RSQ015P10 FRA
Pch -100V -1.5A Power MOSFET
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
100V
470m:
1.5A
1.25W
zFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
5) AEC-Q101 Qualified
zApplication
DC/DC converters
zAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
zOutline
TSMT6
(6)
(5)
(4)
(1)
(2)
(3)
zInner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
zPackaging specifications
Packaging
Taping
Reel size (mm)
180
Tape width (mm)
Type
Basic ordering unit (pcs)
8
3,000
Taping code
TR
Marking
ZN
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
100
r1.5
r6.0
r20
1.25
0.6
150
55 to 150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
22001164..0065--RReevv.C.C
RSQ015P10 FRA
zElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [rC]
Fig.2 Maximum Safe Operating Area
100
Operation in this area
is limited by RDS(on)
PW = 100Ps
10 (VGS = 10V)
PW = 1ms
1
PW = 10ms
0.1
DC Operation
0.01 Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm 㽢 30mm 㽢 0.8mm)
0.001
0.1 1
10
100
1000
Drain - Source Voltage : -VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Single Pulse
1
0.1
0.01
0.001
0.0001
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
Rth(ch-a)=100ºC/W
Rth(ch-a)(t)=r(t)㽢Rth(ch-a)
Mounted on ceramic board
(30mm 㽢 30mm 㽢 0.8mm)
0.01 1 100
Pulse Width : PW [s]
Fig.4 Single Pulse Maxmum
Power dissipation
1000
Ta=25ºC
Single Pulse
100
10
1
0.0001
0.01 1 100
Pulse Width : PW [s]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
4/11
22001164..0065--RReevv.C.C
4페이지 RSQ015P10 FRA
zElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
1000
Ta=25ºC
Pulsed
VGS= 4.0V
VGS= 4.5V
VGS= 10V
100
0.01
0.1 1
Drain Current : -ID [A]
10
Data Sheet
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
700
600
500
400
300
200
VGS = 10V
100 ID = 1.5A
Pulsed
0
-50 -25 0 25 50 75 100 125 150
Junction Temperature : Tj [ºC]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
10000
VGS= 10V
Pulsed
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
10000
VGS= 4.5V
Pulsed
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
100 100
10
0.01
0.1 1
Drain Current : -ID [A]
10
10
0.01
0.1 1
Drain Current : -ID [A]
10
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
7/11
22001164..0065--RReevv.C.C
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부품번호 | 상세설명 및 기능 | 제조사 |
RSQ015P10FRA | MOSFET ( Transistor ) | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |