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부품번호 | RSQ025P03FRA 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 7 페이지수
Transistor
4V Drive Pch MOS FET
RSQ0255PP0033FRA
RSQR0S2Q50P2053PF0R3A
AEC-Q101 Qualified
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.(120mΩ at 4.5V)
2) High Power Package.(PD=1.25W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
DC-DC converter
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : TP
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RRSSQQ002255PP0033FRA
Taping
TR
3000
zEquivalent circuit
(6) (5)
∗2
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Symbol
VDSS
Limits
−30
Unit
V
Gate−source voltage
Drain current
Continuous
Pulsed
VGSS
ID
IDP
∗1
±20
±2.5
±10
V
A
A
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
IS
ISP ∗1
PD ∗2
−1
−4
1.25
A
A
W
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Tch 150
Tstg −55 to +150
°C
°C
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ∗
Limits
100
Unit
°C / W
(4)
∗1
(1)DRAIN
(2)DRAIN
(3)
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN
Rev.A
1/4
Transistor
zMeasurement circuits
VGS
ID
D.U.T.
RG
VDS
RL
VDD
Fig.10 Switching Time Measurement Circuit
VGS
IG(Const)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.12 Gate Charge Measurement Circuit
RSQR0S2Q50P2053PF0R3A
VGS
10%
50%
Pulse Width
10%
VDS 90%
50%
90%
10%
90%
td(on) tr
ton
td(off)
tf
toff
Fig.11 Switching Waveforms
VG
Qg
VGS
Qgs Qgd
Charge
Fig.13 Gate Charge Waveforms
Rev.A
4/4
4페이지 Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
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notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
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information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RSQ025P03FRA | MOSFET ( Transistor ) | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |