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부품번호 | P1403EV8 기능 |
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기능 | P-Channel Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 14mΩ
ID
-12
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
100% UIS tested
LIMITS
-30
±25
-12
-10
-65
-39
89
3
2
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
25 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
40 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -12A
-30
-1 -1.5
-3
V
±100 nA
-1
µA
-10
17.8 22
mΩ
11.3 14
REV 1.0
Jan-29-2010
1
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Capacitance Characteristic
3000
2500
2000
1500
1000
500
0
0 5 10 15 20 25 30
-VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1 .0 E -0 2
1.0E-03
TJ =150° C
TJ =25° C
1.0E-04
1.0E -05
0 .0
0.2 0.4
0.6 0.8 1.0
-VSD, Source-To-Drain Voltage(V)
1.2
Safe Operating Area
1000
Operation in
100 This Area is
Lim ited by
RDS(ON)
↓
10
100us
1
NOTE :
0.1
1.VGS= 10V
2.TA=25˚ C
3.RθJA = 50˚ C/W
4.Single Pulse
1m s
10m s
100m s
1S
10S
DC
0.01
0.1
1
10 100
-VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
150
120 SINGLE PULSE
RθJA = 50˚ C/W
TA=25˚ C
90
60
30
0
0.0001
0.001
0.01
0.1
1
10
1.00E+01
Transient Thermal Response Curve
1.00E+00
Duty Cycle=0.5
0.2
1.00E-01
0.1
0.05
0.02
0.01
single Pluse
1.00E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
T1 , Square Wave Pulse Duration[sec]
REV 1.0
4
Note
1.Duty cycle, D= t1 / t2
2.RthJA = 50 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
1.E+01
1.E+02
Jan-29-2010
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부품번호 | 상세설명 및 기능 | 제조사 |
P1403EV8 | P-Channel Enhancement Mode MOSFET | UNIKC |
P1403EV8 | P-Channel Field Effect Transistor | NIKO-SEM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |