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PDF IXXH150N60C3 Data sheet ( Hoja de datos )
| Número de pieza | IXXH150N60C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
600V XPTTM IGBT
GenX3TM
Extreme Light Punch through
IGBT for 20-60kHz Switching
IXXH150N60C3
VCES = 600V
IC110 = 150A
VCE(sat) 2.5V
tfi(typ) = 75ns
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCu(rCrehnipt
Capability)
Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
300 A
160 A
150 A
700 A
75 A
750 mJ
ICM = 300
VCE VCES
10
A
μs
1360
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 150A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
25 A
1 mA
200 nA
2.1 2.5 V
2.6 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
International Standard Package
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100558(8/13)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
6
Eoff Eon - - - -
5 TJ = 150ºC , VGE = 15V
VCE = 400V
4
I C = 100A
12
10
8
36
24
1
I C = 50A
2
0
2
4.5
4.0
3.5
4 6 8 10 12 14
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff Eon - - - -
RG = 2Ω , VGE = 15V
VCE = 400V
0
8
7
6
3.0
IC = 100A
2.5
5
4
2.0 3
1.5
IC = 50A
1.0
2
1
0.5
25
50 75 100
TJ - Degrees Centigrade
125
0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
130 180
120
tfi
td(off) - - - -
170
RG = 2Ω , VGE = 15V
110
VCE = 400V
160
100
TJ = 150ºC
90
150
140
80 130
70 TJ = 25ºC
60
120
110
50 100
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXXH150N60C3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
4.0
Eoff Eon - - - -
3.5 RG = 2Ω , VGE = 15V
VCE = 400V
3.0
8
7
6
2.5
TJ = 150ºC
2.0
5
4
1.5
TJ = 25ºC
3
1.0 2
0.5 1
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
140 500
130 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
120 VCE = 400V
450
400
110 350
I C = 100A
100 300
90 250
80
I C = 50A
200
70 150
60 100
2 4 6 8 10 12 14
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
110 190
t f i td(off) - - - -
100 RG = 2Ω , VGE = 15V
VCE = 400V
I C = 50A
90
170
150
80 130
I C = 100A
70 110
60
25
50 75 100 125
TJ - Degrees Centigrade
90
150
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXXH150N60C3.PDF ] | |
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