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부품번호 | 2N5550 기능 |
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기능 | Amplifier Transistors | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5550 2N5551
140 160
160 180
6.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N5550
2N5551
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
2N5550
2N5551
2N5550
2N5551
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2N5550
2N5551*
*Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
140
160
160
180
6.0
ICBO
IEBO
—
—
—
—
—
Max Unit
Vdc
—
—
Vdc
—
—
— Vdc
100 nAdc
50
100 µAdc
50
50 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
2N5550 2N5551
101
VCE = 30 V
100
10–1 TJ = 125°C IC = ICES
10–2 75°C
10–3 REVERSE
FORWARD
10–4 25°C
10–5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
2.5
2.0
1.5
1.0
0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.1
TJ = – 55°C to +135°C
qVC for VCE(sat)
qVB for VBE(sat)
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
100
10.2 V
Vin
10 µs
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
VBB
– 8.8 V
100
0.25 µF RB
5.1 k
Vin 100
VCC
30 V
3.0 k RC
1N914
Vout
Values Shown are for IC @ 10 mA
Figure 6. Switching Time Test Circuit
100
70 TJ = 25°C
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2 0.3
Cibo
Cobo
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
20
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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부품번호 | 상세설명 및 기능 | 제조사 |
2N5550 | mplifier Transistors(NPN Silicon) | ON Semiconductor |
2N5550 | NPN high-voltage transistors | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |