Datasheet.kr   

4NM50 데이터시트 PDF




Unisonic Technologies에서 제조한 전자 부품 4NM50은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 4NM50 자료 제공

부품번호 4NM50 기능
기능 N-CHANNEL POWER MOSFET
제조업체 Unisonic Technologies
로고 Unisonic Technologies 로고


4NM50 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

4NM50 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
4NM50
Preliminary
4.0A, 500V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM50 is a high voltage super junction MOSFET and is
designed to have better characteristics.
The UTC 4NM50 Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and reliability.
such as low gate charge, low on-state resistance and have a high
power density and high rugged avalanche characteristics. This super
junction MOSFET usually used at AC/DC power conversion, and
industrial power applications.
FEATURES
* RDS(ON) < 1.3@ VGS = 10V, ID = 2.0A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM50L-TA3-T
4NM50G-TA3-T
4NM50L-TF3-T
4NM50G-TF3-T
4NM50L-TF1-T
4NM50G-TF1-T
4NM50L-TF2-T
4NM50G-TF2-T
4NM50L-TM3-T
4NM50G-TM3-T
4NM50L-TN3-R
4NM50G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
123
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-156.d




4NM50 pdf, 반도체, 판매, 대치품
4NM50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
IDSS VDS = 500V, VGS = 0V
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 2.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0 MHz
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDS=50V, VGS=10V, ID=1.3A,
IG = 100μA (Note 1, 2)
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
tD(ON)
tR
tD(OFF)
tF
VDD =30V, VGS=10V, ID =0.5A,
RG=25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
ISM
VSD IS=4.0A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr IS=4.0A, VGS=0V,
Body Diode Reverse Recovery Charge
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle2%.
2. Essentially independent of operating temperature.
MIN
TYP
MAX
UNI
T
500 V
1 μA
100 nA
-100 nA
2.5 4.5 V
1.3
215 pF
175 pF
27 pF
23 nC
2.5 nC
8.5 nC
40 ns
60 ns
96 ns
43 ns
4
16
1.4
210
1.52
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-156.d

4페이지










4NM50 전자부품, 판매, 대치품
4NM50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R205-156.d

7페이지


구       성 총 7 페이지수
다운로드[ 4NM50.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
4NM50

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵