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13NM60 데이터시트 PDF




Unisonic Technologies에서 제조한 전자 부품 13NM60은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 13NM60 기능
기능 N-CHANNEL POWER MOSFET
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13NM60 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
13NM60
13A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 13NM60 is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a
high rugged avalanche characteristics. This power MOSFET is
usually used at DC-DC, AC-DC converters for power
applications.
FEATURES
* RDS(ON) < 0.45@ VGS = 10V, ID = 6.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
13NM60L-TA3-T
13NM60G-TA3-T
TO-220
13NM60L-TF1-T
13NM60G-TF1-T
TO-220F1
13NM60L-TF2-T
13NM60G-TF2-T
TO-220F2
13NM60L-TF3-T
13NM60G-TF3-T
TO-220F
13NM60L-TM3-T
13NM60G-TM3-T
TO-251
13NM60L-TN3-R
13NM60G-TN3-R
TO-252
13NM60L-TQ2-T
13NM60G-TQ2-T
TO-263
13NM60L-TQ2-R
13NM60G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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13NM60 pdf, 반도체, 판매, 대치품
13NM60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, ID=1.3A, IG=100μA
VGS=10V (Note 1,2)
VDD =30V, ID =0.5A, RG =25,
VGS=10V (Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1) VSD IS =13A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS =13A, VGS=0V,
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
MIN TYP MAX UNIT
600 V
10 μA
100 nA
-100 nA
2.5 4.5 V
0.45
300 pF
330 pF
40 pF
100 nC
9 nC
25 nC
56 nS
140 nS
210 nS
130 nS
13
52
1.4
370
5.4
A
A
V
nS
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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13NM60 전자부품, 판매, 대치품
13NM60
TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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