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4NM65 데이터시트 PDF




Unisonic Technologies에서 제조한 전자 부품 4NM65은 전자 산업 및 응용 분야에서
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부품번호 4NM65 기능
기능 N-CHANNEL POWER MOSFET
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4NM65 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
4NM65
Preliminary
4.0A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM65 is a Super Junction MOSFET, designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristic. This power MOSFET is usually used in
high speed switching applications including power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) <1.4@ VGS = 10 V, ID = 2.0 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
11
TO-251
TO-220F
1
TO-220F1
1
TO-251S
1
TO-252
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM65L-TF3-T
4NM65G-TF3-T
4NM65L-TF1-T
4NM65G-TF1-T
4NM65L-TM3-T
4NM65G-TM3-T
4NM65L-TMS-T
4NM65G-TMS-T
4NM65L-TN3-R
4NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-220F1
TO-251
TO-251S
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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4NM65 pdf, 반도체, 판매, 대치품
4NM65
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
10 μA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
2.5 4.5 V
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10 V, ID = 2.0A
1.4
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1MHz
255 pF
179 pF
Reverse Transfer Capacitance
CRSS
24 pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDS=50V, VGS=10V, ID=1.3A,
IG = 100μA (Note 1, 2)
44
4.5
7.8
nC
nC
nC
Turn-ON Delay Time (Note 1)
tD(ON)
43 ns
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD =30V, VGS=10V, ID =0.5A,
RG=25(Note 1, 2)
70
120
ns
ns
Fall-Time
tF
50 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
4.4 A
Maximum Body-Diode Pulsed Current
ISM
17.6 A
Drain-Source Diode Forward Voltage (Note 1)
VSD VGS = 0 V, IS = 4.0A
1.4 V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr VGS=0V, IS=4.0A
Qrr dIF/dt=100A/μs
250 ns
2.0 μC
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4NM65 전자부품, 판매, 대치품
4NM65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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