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9NM65 데이터시트 PDF




Unisonic Technologies에서 제조한 전자 부품 9NM65은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 9NM65 기능
기능 N-CHANNEL POWER MOSFET
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9NM65 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
9NM65
Preliminary
9.0A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 9NM65 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.56@ VGS=10V, ID=4.5A
* High switching Speed
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9NM65L-TA3-T
9NM65G-TA3-T
9NM65L-TF1-T
9NM65G-TF1-T
9NM65L-TF2-T
9NM65G-TF2-T
9NM65L-TF3-T
9NM65G-TF3-T
9NM65L-TM3-T
9NM65G-TM3-T
9NM65L-TN3-R
9NM65G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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9NM65 pdf, 반도체, 판매, 대치품
9NM65
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=650V, VGS=0V
VGS=+30V
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 2)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A ,
IG=100µA (Note 1, 2)
VDD=30V, VGS=10V, ID=0.5A,
RG=25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current (Note 1)
ISM
Drain-Source Diode Forward Voltage (Note 2)
VSD IS=9.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge (Note 1)
trr IS=9.0A, VGS=0V,
Qrr dIF/dt = 100 A/μs
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650 V
10 µA
+100 nA
-100 nA
2.5 4.5 V
0.56
550 pF
375 pF
28 pF
42 nC
5 nC
15 nC
49 ns
86 ns
195 ns
65 ns
9.0 A
3.6 A
1.4 V
320 ns
3.9 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9NM65 전자부품, 판매, 대치품
9NM65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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