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11NM65-U2 데이터시트 PDF




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부품번호 11NM65-U2 기능
기능 N-CHANNEL POWER MOSFET
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11NM65-U2 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
11NM65-U2
Preliminary
11A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11NM65-U2 is a Super Junction MOSFET
Structure and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state resistance
and a high rugged avalanche characteristics. This power
MOSFET is usually used at DC-DC, AC-DC converters for
power applications.
FEATURES
* RDS(ON) < 0.55@ VGS=10V, ID=5.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM65L-TA3-T
11NM65G-TA3-T
11NM65L-TF3-T
11NM65G-TF3-T
11NM65L-TF1-T
11NM65G-TF1-T
11NM65L-TM3-T
11NM65G-TM3-T
11NM65L-TN3-R
11NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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11NM65-U2 pdf, 반도체, 판매, 대치품
11NM65-U2
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
650
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS= VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDS=50V, VGS=10V, ID=1.3A ,
IG=100µA (Note 1, 2)
Turn-ON Delay Time (Note 1)
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=30V, VGS=10V, ID=0.5A,
RG=25(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS =11A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS =11A, VGS=0V,
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
2.5
TYP
610
377
27
40
4.6
12.8
74
94
254
116
358
4.8
MAX UNIT
V
10 µA
100 nA
-100 nA
4.5 V
0.55
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
11 A
44 A
1.4 V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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11NM65-U2 전자부품, 판매, 대치품
11NM65-U2
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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11NM65-U2

N-CHANNEL POWER MOSFET

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