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부품번호 | 2NM70 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
2NM70
Preliminary
2A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 2NM70 is an Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 3.0Ω @ VGS = 10V , ID = 1.0 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
- 2NM70G-AA3-R
2NM70L-TA3-T
2NM70G-TA3-T
2NM70L-TF1-T
2NM70G-TF1-T
2NM70L-TF2-T
2NM70G-TF2-T
2NM70L-TF3-T
2NM70G-TF3-T
2NM70L-TM3-T
2NM70G-TM3-T
2NM70L-TN3-R
2NM70G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tape Reel
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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2NM70
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID =1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VGS =0V, VDS =25V, f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDS=50V, VGS=10V, ID=1.3A,
ID=100µA (Note 1, 2)
Turn-ON Delay Time (Note 1)
tD (ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=30V, VGS=10V, ID=0.5A,
RG=25Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
ISD
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=2.0A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS=2.0A, VGS=0V,
Qrr dIF/dt=100A/µs
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
700 V
10 μA
100 nA
-100 nA
2.5 4.5 V
3.0 Ω
150 pF
73 pF
12 pF
21 nC
2.0 nC
5.6 nC
34 ns
4.2 ns
75 ns
28 ns
270
1140
2.0
8.0
1.4
A
A
V
nS
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4페이지 2NM70
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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부품번호 | 상세설명 및 기능 | 제조사 |
2NM70 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |