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PDF 20N50 Data sheet ( Hoja de datos )
| Número de pieza | 20N50 | |
| Descripción | N-Channel MOSFETS | |
| Fabricantes | OGFD | |
| Logotipo |  |
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N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced
planar stripe DMOS technology. This high density
process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery
powered circuits where high-side switching and low
in-line power loss are needed in a very small outline
surface mount package.
20N50
V DSS
RDS(ON )
ID
500V 0.26Ω 20A
TO-3P
Features
• 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
• Low gate charge (typical 70Nc)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
20N50
TO-3P
0GFD
www.goford.cn TEL：0755-86350980 FAX：0755-86350963
1 page  
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1.
2.
VIDG=S =2500Vµ
A
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
20N50
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 10.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
Operation in This Area
102 is Limited by R DS(on)
10 µs
100 µs
1 ms
101 10 ms
DC
100
10-1
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
20
16
12
8
4
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
www.goford.cn TEL：0755-86350980 FAX：0755-86350963
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 20N50.PDF ] | |
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