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TC55257BSPL-10LV 데이터시트 PDF




Toshiba에서 제조한 전자 부품 TC55257BSPL-10LV은 전자 산업 및 응용 분야에서
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부품번호 TC55257BSPL-10LV 기능
기능 SILICON GATE CMOS STATIC RAM
제조업체 Toshiba
로고 Toshiba 로고


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TC55257BSPL-10LV 데이터시트, 핀배열, 회로
TOSHIBA
TC55257BPL/BFL/BSPL/BFIL/BTRL85L/IOL(LV)
SILICON GATE CMOS
32,768 WORD x 8 BIT STATIC RAM
Description
The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a
single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
5mNMHz fup.) and a minimum cycle time of 85ns.
When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J,lA at room tem-
perature. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an
output enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high
speed, low power, and battery backup are required.
The TC55257BPL is offered in a standard dual-in-line 28-pin plastic package (0.6/0.3 inch width), a small outline plastic pack-
age, and a thin small outline plastic package (forward type, reverse type).
Features
• Low power dissipation:
• Standby current:
• Single 5V power supply
• Access time (max.)
27.5mW/MHz (typ.)
21lA (max.) at Ta =25°C
TC55257BPL/BFl/BSPL/BFTL/BTRL
Access Time
Chip Enable Access Time
Output Enable Time
-85L(LV)
85ns
85ns
45ns
-10L(LV)
100ns
100ns
50ns
• Power down feature:
CE
• Data retention supply voltage:
2.0 - 5.5V
• Inputs and outputs TIL compatible
• Package
TC55257BPL: DIP28-P-600
TC55257BFL : SOP28-P-450
TC55257BSPL : DIP28-P-300B
TC55257BFTL : TSOP28-P
TC55257BTRL : TSOP28-P-A
Pin Names
AO - A14 Address Inputs
RIW
ReadlWrite Control Input
OE Output Enable Input
CE Chip Enable Input
1/01 - 1/08 Data Input/Output
V DD
GND
Power (+5V)
Ground
Pin Connection (Top View)
A14
A12
A7
AS
A4
A3
A2
1101
1/02
1/03
GNO
Voo
RJW
A13
A8
A9
A1l
OE
Al0
CE
1108
1107
1/06
1/05
1/04
(forward type)
14
~S 28
( reverse type)
14
28 1~
PIN NO.
1 2 3 4 5 6 7 8 9 10 11 12 13 14
PIN NAME OE All
Ag
As A13 RIW VDD A14 A12
A7
A6
As
A4
A3
PIN NO.
15 16 17 18 19 20 21 22 23 24 25 26 27 28
PIN NAME
A2
Al
Ao 1101 1/02 1/03 GND 1/04 1/05 1/06 1/07 1108 CE Al0
TOSHIBA AMERICA ELECTRONIC COMPDNENTS, INC.
A-33




TC55257BSPL-10LV pdf, 반도체, 판매, 대치품
TC55257BPUBFUBSPUBFTUBTRL-85U10L(LV) Static RAM
= =AC Characteristics (Ta 0 - 70°C, Voo 5V±10%)
Read Cycle
SYMBOL
PARAMETER
tRC
tAcc
tco
tOE
tCOE
tOEE
too
tODO
tOH
Read Cycle Time
Address Access Time
CE Access Time
Output Enable to Output in Valid
Chip Enable (CE) to Output in Low-Z
Output Enable to Output in Low-Z
Chip Enable (CE) to Output in High-Z
Output Enable to Output in High-Z
Output Data Hold Time
TC55257BPL/BFL/BSPL/BFTL/BTRL
-85L(LV)
-10L(LV)
MIN. MAX. MIN. MAX.
85 - 100 -
- 85 - 100
- 85 - 100
- 45 - 50
10 -
10 -
5-
5-
- 30 - 50
- 30 - 40
10 -
10 -
UNIT
ns
Write Cycle
SYMBOL
PARAMETER
twc
twp
tcw
tAS
tWR
toow
tOEW
tos
tDH
Write Cycle Time
Write Pulse Width
Chip Selection to End of Write
Address Setup Time
Write Recovery Time
RIW to Output in High-Z
RIW to Output in Low-Z
Data Setup Time
Data Hold Time
AC Test Conditions
Input Pulse Levels
Input Pulse Rise and Fall Time
Input Timing Measurement Reference Levels
Output Timing Measurement Reference Levels
Output Load
TC55257BPL/BFL/BSPL/BFTL/BTRL
-85L(LV)
-10L(LV)
MIN. MAX. MIN. MAX.
85 - 100 -
60 - 70 -
65 -
90 -
0-
0-
5-
5-
- 30 - 50
5-
5-
40 -
40 -
0-
0-
UNIT
ns
2.4V/0.6V
5ns
2.2V/0.8V
2.2V/0.8V
1 TTL Gate and CL = 100pF
A-36
TOSHIBA AMERICA' ELECTRONIC COMPONENTS, INC.

4페이지










TC55257BSPL-10LV 전자부품, 판매, 대치품
Static RAM TC55257BPUBFUBSPUBFTUBTRL-85U10L(LV)
Data Retention Characteristics (Ta =0 - 70°C)
SYMBOL
PARAMETER
VOH
IOOS2
tCOR
tR
Data Retention Supply Voltage
Standby Current
Chip Deselect to Data Retention Mode
Recovery Time
IVOH =3.0V
IVDH =5.5V
MIN.
2.0
-
-
0
tRC (1)
TYP.
-
-
-
-
-
MAX.
5.5
20
30
-
-
UNIT
V
~
Ils
Note (1): Read Cycle Time
CE Controlled Data Retention Mode
Voo
4.SV
DATA RETENTION MODE
tCOR
Voo-O.2V
GND
Note (2): If the V1H of CE is 2.2V in operation, IDDS1 current flows during the period that the VDD voltage is going down from 4.5V to 2.4V.
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
A-39

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