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Número de pieza | CJX3439K | |
Descripción | N-Channel + P-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJX3439K (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
CJX3439K N Channel +P Channel MOSFET
V(BR)DSS
20 V
-20V
RDS(on)MAX
380mΩ@ 4.5V
450mΩ@ 2.5V
800mΩ@1.8V
520mΩ@-4.5V
700mΩ@-2.5V
950mΩ(TYP)@-1.8V
ID
0.75A
-0.66A
SOT-563
FEATURE
z Surface Mount Package
z Low RDS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
MARKING
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
Equivalent Circuit
D1 G2 S2
6 54
12 3
S1 G1 D2
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
P-MOSFET
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
VDS
VGS
ID
IDM
RθJA
TJ
TSTG
TL
www.cj-elec.com
1
Value
20
±12
0.75
1.8
-20
±12
-0.66
-1.2
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
A
℃/W
℃
℃
℃
C,Jun,2015
1 page SOT-563 Package Outline Dimensions
SOT-563 Suggested Pad Layout
www.cj-elec.com
5
C,Jun,2015
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet CJX3439K.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJX3439K | N-Channel + P-Channel MOSFET | JCET |
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