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부품번호 | DTA115EE 기능 |
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기능 | Digital Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
MUN2136, MMUN2136L,
MUN5136, DTA115EE,
DTA115EM3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 100 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
Collector−Emitter Voltage
VCBO
VCEO
50
50
Vdc
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
SOT−723
CASE 631AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2016 − Rev. 4
1
Publication Order Number:
DTA115E/D
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
− − 100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
− − 500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
− − 0.05
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 5.0 mA, VCE = 10 V)
hFE
80 150
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
− 0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
− 1.2 0.5
Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 1.0 mA)
Vi(on)
3.0 1.6
−
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
VOL Vdc
− − 0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9 −
−
Vdc
Input Resistor
R1
70 100 130
kW
Resistor Ratio
R1/R2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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4
4페이지 MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
3
E HE
12
e
TOP VIEW
3X b
0.25
T
L
L1
VIEW C
A
A1 SIDE VIEW
SEE VIEW C
END VIEW
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN
NOM MAX
A 0.89 1.00 1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.08 0.14 0.20
D 2.80 2.90 3.04
E 1.20 1.30 1.40
e 1.78 1.90 2.04
L 0.30 0.43 0.55
L1 0.35
0.54
0.69
H E 2.10
T 0_
2.40
−−−
2.64
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
0.021 0.027
0.094 0.104
−−− 10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X 0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DTA115E | PNP DIGITAL TRANSISTOR | Unisonic Technologies |
DTA115EE | Digital Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |