Datasheet.kr   

DTA115EE 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 DTA115EE은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 DTA115EE 자료 제공

부품번호 DTA115EE 기능
기능 Digital Transistors
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


DTA115EE 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

DTA115EE 데이터시트, 핀배열, 회로
MUN2136, MMUN2136L,
MUN5136, DTA115EE,
DTA115EM3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 100 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
CollectorEmitter Voltage
VCBO
VCEO
50
50
Vdc
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
SOT723
CASE 631AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2016 Rev. 4
1
Publication Order Number:
DTA115E/D




DTA115EE pdf, 반도체, 판매, 대치품
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
− − 100
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
− − 500
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
− − 0.05
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 5.0 mA, VCE = 10 V)
hFE
80 150
CollectorEmitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
1.2 0.5
Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 1.0 mA)
Vi(on)
3.0 1.6
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
VOL Vdc
− − 0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
70 100 130
kW
Resistor Ratio
R1/R2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
www.onsemi.com
4

4페이지










DTA115EE 전자부품, 판매, 대치품
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
3
E HE
12
e
TOP VIEW
3X b
0.25
T
L
L1
VIEW C
A
A1 SIDE VIEW
SEE VIEW C
END VIEW
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN
NOM MAX
A 0.89 1.00 1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.08 0.14 0.20
D 2.80 2.90 3.04
E 1.20 1.30 1.40
e 1.78 1.90 2.04
L 0.30 0.43 0.55
L1 0.35
0.54
0.69
H E 2.10
T 0_
2.40
−−−
2.64
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
0.021 0.027
0.094 0.104
−−− 10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X 0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
7

7페이지


구       성 총 10 페이지수
다운로드[ DTA115EE.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
DTA115E

PNP DIGITAL TRANSISTOR

Unisonic Technologies
Unisonic Technologies
DTA115EE

Digital Transistors

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵