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EMC4DXV5T1G PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EMC4DXV5T1G
기능 Dual Common Base-Collector Bias Resistor Transistors
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EMC4DXV5T1G 데이터시트, 핀배열, 회로
EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1G series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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32
R1 R2
1
Q1
4
R2
R1
Q2
5
5
1
SOT−553
CASE 463B
MARKING DIAGRAM
Ux M G
G
Ux = Specific Device Code
x = C, 3, E, or 5
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 7
1
Publication Order Number:
EMC2DXV5T1/D




EMC4DXV5T1G pdf, 반도체, 판매, 대치품
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR
10
IC/IB = 10
1000
VCE = 10 V
1 25°C
TA = -25°C
100
75°C
 0.1
TA = 75°C
25°C
-25°C
0.01
0
4
3
2
1
0
0
 20  40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
 50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 1 MHz
lE = 0 mA
TA = 25°C
100
75°C 25°C
TA = -25°C
10
1
 0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (V)
Figure 4. Output Capacitance
 0.01
VO = 5 V
50  0.001 0 1  2  3  4  5  6  7  8  9 10
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
TA = -25°C
10 25°C
75°C
1
 0.1
0
10  20  30  40
IC, COLLECTOR CURRENT (mA)
 50
Figure 6. Input Voltage versus Output Current
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EMC4DXV5T1G 전자부품, 판매, 대치품
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR
1
IC/IB = 10
0.1 TA = -25°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
-25°C
0.001
0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
50
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
100
f = 1 MHz
IE = 0 mA
TA = 25°C
100
10
1
75°C 25°C
TA = -25°C
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (V)
Figure 19. Output Capacitance
0.01
0.001
50 0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (V)
10
Figure 20. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = -25°C
75°C 25°C
0.1
0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output
Current
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EMC4DXV5T1

(EMC3DXV5T1 / EMC4DXV5T1) Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors

ON Semiconductor
ON Semiconductor
EMC4DXV5T1G

Dual Common Base-Collector Bias Resistor Transistors

ON Semiconductor
ON Semiconductor

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