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Número de pieza | MTB012N10RQ8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB012N10RQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=8A
100V
10A
10.3 mΩ(typ)
12.3 mΩ(typ)
Symbol
MTB012N10RQ8
Outline
SOP-8
D
D
D
D
G:Gate
D:Drain
S:Source
Pin 1
G
S
S
S
Ordering Information
Device
MTB012N10RQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB012N10RQ8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
100
Coss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1.0 ID=1mA
0.8
10
f=1MHz
Crss
1
0 10 20 30 40
VDS, Drain-Source Voltage(V)
50
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
2 VDS=80V
ID=10A
0
0 5 10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
12
10
8
6
4
2 TA=25°C,RθJA=40°C/W,VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB012N10RQ8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB012N10RQ8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB012N10RQ8 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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