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PDF MTB24B03Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTB24B03Q8 | |
| Descripción | Dual P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB24B03Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2016.12.05
Page No. : 1/9
Dual P-Channel Logic Level Enhancement Mode Power MOSFET
MTB24B03Q8 BVDSS
ID @VGS=-10V, TC=25 °C
RDSON(MAX)@VGS=-10V, ID=-8A
Features
• RDS(ON)=24mΩ(max.)@VGS=-10V, ID=-8A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual P-ch MOSFET package
• Pb-free lead plating & Halogen-free package
RDSON(MAX)@VGS=-4.5V, ID=-6A
-30V
-8A
18mΩ(typ.)
27mΩ(typ.)
Equivalent Circuit
MTB24B03Q8
Outline
SOP-8
D2
D2
D1
D1
G：Gate D：Drain S：Source
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB24B03Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB24B03Q8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2016.12.05
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4 -ID=250μA
1.2
1000
C oss
100
0.1
Crss
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
-VDS=5V
Pulsed
Ta=25°C
0.01 0.1 1 10
-ID, Drain Current(A)
100
1
0.8
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
10
VDS=-15V
8 VDS=-10V
VDS=-5V
6
4
2 ID=-8A
0
0 4 8 12 16 20 24 28
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDSON
Limited
10
100μs
1ms
1
0.1 TA=25°C, Tj=175°C
VGS=10V, θJA=125°C/W
Single Pulse
0.01
0.01 0.1
1
10
-VDS, Drain-Source Voltage(V)
10ms
1s
100ms
DC
100
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
25
TA=25°C
-VGS=10V
RθJA=78°C/W
50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB24B03Q8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB24B03Q8.PDF ] | |
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