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PDF MTBH0N25J3 Data sheet ( Hoja de datos )
| Número de pieza | MTBH0N25J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTBH0N25J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTBH0N25J3 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP)
VGS=10V, ID=3A
VGS=4.5V, ID=2A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
250V
3.5A
1.0A
780mΩ
735mΩ
Equivalent Circuit
MTBH0N25J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
Package
MTBH0N25J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C oss
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1 VDS=15V
Gate Charge Characteristics
10
8
6
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
10
RDSON
Limited
1
100μs
1ms
10ms
100m
1s
0.1
TC=25°C, Tj=175°C
VGS=10V, RθJC=5°C/W
Single Pulse
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
DC
1000
4
VDS=200V
2 ID=3A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
4
3.5
3
2.5
2
1.5
1
0.5 VGS=10V, RθJC=5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTBH0N25J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTBH0N25J3.PDF ] | |
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