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SP8J3 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SP8J3
기능 4V Drive Pch+Pch MOS FET
제조업체 ROHM
로고 ROHM 로고 


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SP8J3 데이터시트, 핀배열, 회로
Transistors
4V Drive Pch+Pch MOS FET
SP8J3
SP8J3
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (100mat 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
SP8J3
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
zInner circuit
(8) (7) (6)
(5)
2 2
1 1
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Limits
30
±20
±3.5
±14
1.6
14
2.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
62.5
Unit
°C / W
Rev.A
1/4




SP8J3 pdf, 반도체, 판매, 대치품
Transistors
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.10 Switching Time Test Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.12 Gate Charge Test Circuit
SP8J3
VGS 10%
90%
90%
90%
VDS
td(on)
10%
tr
ton
td(off)
10%
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.13 Gate Charge Waveform
Rev.A
4/4

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