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PDF SP8M6FRA Data sheet ( Hoja de datos )
| Número de pieza | SP8M6FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
4V Drive Nch+Pch MOSFET
SP8M6 FRA
SP8MS6PF8RMA6
AEC-Q101 Qualified
zStructure
Silicon N-channel / P-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SP8M6FRA
Taping
TB
2500
zAbsolute maximum ratings (Ta=25qC)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP∗1
IS
ISP∗1
PD∗2
Tch
Tstg
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Limits
Nchannel Pchannel
30 −30
±20 ±20
±5.0
±3.5
±20 ±14
1.6 −1.6
20 −14
2
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a) ∗
Limits
62.5
Unit
°C / W
Rev.C
1/5
1 page  
Transistors
P-ch
zElectrical characteristic curves
10000
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
100
Coss
Crss
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1000
100
td (off)
tf
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
td (on)
10
tr
1
0.01 0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.2 Switching Characteristics
SP8MS6PF8RMA6
8
Ta=25°C
7 VDD= −15V
ID= −3.5A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
012345678
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS= −10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristics
400
Ta=25°C
350 Pulsed
300
ID=−3.5A
250 ID=−1.75A
200
150
100
50
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VGS=0V
Pulsed
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −10V
Pulsed
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4.5V
Pulsed
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4V
Pulsed
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.C
5/5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SP8M6FRA.PDF ] | |
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