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부품번호 | SP8M6 기능 |
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기능 | Switching Transistors | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 6 페이지수
Transistors
Switching
SP8M6
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
SP8M6
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
0.2±0.1
0.4±0.1
1.27 0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 −30
20 −20
±5.0 ±3.5
±20 ±14
1.6 −1.6
20 −14
2
150
−55 to +150
Unit
V
V
A
A ∗1
A
A ∗1
W ∗2
°C
°C
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
∗
Rev.A
1/5
Transistors
N-ch
zElectrical characteristic curves
1000
Ta=25°C
f=1MHz
VGS=0V
100
Ciss
Coss
Crss
10
0.01 0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10000
1000 tf
100 td (off)
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
10 tr
td (on)
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
SP8M6
10
Ta=25°C
9 VDD=15V
8
ID=5A
RG=10Ω
7 Pulsed
6
5
4
3
2
1
0
012345678
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
300
Ta=25°C
Pulsed
250
200
ID=5A
ID=2.5A
150
100
50
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125°C
Ta=75°C
Ta=25°C
1 Ta= −25°C
VGS=0V
Pulsed
0.1
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=10V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4V
Pulsed
10 10 10
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.A
4/5
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ SP8M6.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SP8M10 | Switching | ROHM Semiconductor |
SP8M2 | 4V Drive Nch + Pch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |