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PDF HMC1086F10 Data sheet ( Hoja de datos )
| Número de pieza | HMC1086F10 | |
| Descripción | 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v04.0714
Typical Applications
The HMC1086F10 is ideal for:
• Test Instrumentation
• General Communications
• Radar
• EW/ECM
Functional Diagram
HMC1086F10
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Features
High Psat: +44.5 dBm
Power Gain at Psat: 11 dB
High Output IP3: +46 dBm
Small Signal Gain: 23 dB
Supply Voltage: Vdd = +28V @ 1100 mA
50 Ohm Matched Input/Output
10-Lead Flange Mount Package
General Description
The HMC1086F10 is a 25W Gallium Nitride (GaN)
MMIC Power Amplifier which operates between
2 and 6 GHz, and is provided in a 10-lead flange
mount package. The amplifier typically provides
23 dB of small signal gain, +44.5 dBm saturated
output power, and delivers +46 dBm output IP3 at
+33 dBm output power per tone. The amplifier draws
1100 mA quiescent current from a +28V DC supply.
The RF I/Os are DC blocked and matched to 50 Ohms
for ease of use.
Electrical
Idd = 1100
Specifications,
mA [1]
TA
=
+25°
C,
Vgg
=
Vgg1
=
Vgg2,
Vdd
=
Vdd1
=
Vdd2
=
+28V,
Parameter
Frequency Range
Small Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 4dB Compression (P4dB)
Power Gain for 4dB Compression (P4dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2]
Power Added Efficiency (PAE)
Total Supply Current (Id1 + Id2)
Min.
20
Typ.
2-4
23
±1
0.03
15
12
41
20
44.5
46
35
1100
Max.
Min.
21
Typ.
4-6
24
±0.5
0.03
17
12
41
20
44.5
46
32
1100
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dB
dBm
dBm
%
mA
[1] Adjust Vgg between -8 to 0V to achieve Idd = 1100 mA typical.
[2] Measurement taken at Pout / tone = +33 dBm.
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1 page  
v04.0714
HMC1086F10
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Output IM3 @ Vdd= +32V
50
40
30
20
10
26
28 30 32 34 36
Pout/TONE (dBm)
2 GHz
3 GHz
4 GHz
38 40
5 GHz
6 GHz
Power Compression @ 4 GHz
50 3300
45 3060
40 2820
35 2580
30 2340
25 2100
20 1860
15 1620
10 1380
5 1140
0 900
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Gain & Power vs.
Supply Voltage @ 4 GHz
50
45
40
35
30
25
20
24
26 28
Vdd (V)
30
32
GAIN(dB)
P4dB(dBm)
Psat(dBm)
Power Compression @ 2 GHz
50 3000
45 2790
40 2580
35 2370
30 2160
25 1950
20 1740
15 1530
10 1320
5 1110
0 900
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Power Compression @ 6 GHz
50 3000
45 2790
40 2580
35 2370
30 2160
25 1950
20 1740
15 1530
10 1320
5 1110
0 900
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Gain & Power vs.
Supply Current @ 4 GHz
50
45
40
35
30
25
20
550 650 750 850 950 1050 1150 1250 1350 1450 1550 1650
Idd (mA)
GAIN(dB)
P4dB(dBm)
Psat(dBm)
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5 Page 
Evaluation PCB
v04.0714
HMC1086F10
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Evaluation Order Information
Item
Contents
Evaluation PCB
HMC1086F10 Evaluation PCB
[1] Reference this number when ordering Evaluation PCB
Part Number
EVAL01-HMC1086F10 [1]
List of Materials for Evaluation PCB EVAL01-HMC1086F10
Item
Description
J2, J3
SRI K Connector
J1 DC Connector
J4, J5
Preform jumpers
C1 - C6
1 uF Capacitor, 0602 Pkg.
C7 - C8
10 uF Capacitor, 1210 Pkg.
U1 HMC1086F10
PCB [1]
600-00619-00 Evaluation PCB
[1] Circuit Board Material: Rogers 4350 or Arlon 25FR
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HMC1086F10.PDF ] | |
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