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HMC-MDB218 데이터시트 PDF




Analog Devices에서 제조한 전자 부품 HMC-MDB218은 전자 산업 및 응용 분야에서
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부품번호 HMC-MDB218 기능
기능 GaAs MMIC SUB-HARMONIC IRM MIXER
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HMC-MDB218 데이터시트, 핀배열, 회로
v01.0209
Typical Applications
This HMC-MDB218 is ideal for:
• Short-Haul / High Capacity Radios
• SATCOM
3 • Military Radar, ECM & EW
• Sensors
• Test & Measurement Equipment
Functional Diagram
HMC-MDB218
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
Features
Wide IF Bandwidth: DC - 3 GHz
RF Frequency: 54 to 64 GHz
LO Frequency: 27 to 32 GHz
High Image Rejection: 30 dB
Passive; No DC Bias Required
Die Size: 1.54 x 1.41 x 0.1 mm
General Description
The HMC-MDB218 is a sub-harmonically pumped (x2)
MMIC Mixer which can be used as either an image
reject mixer (IRM) or a single sideband upconverter.
This passive MMIC mixer is fabricated with GaAs
Heterojunction Bipolar Transistor (HBT) Shottky diode
technology. For downconversion applications, an
external quadrature hybrid can be used to select the
desired sideband while rejecting image signals. All
bond pads and the die backside are Ti/Au metallized
and the Shottky devices are fully passivated for reliable
operation. The HMC-MDB218 Sub Harmonic IRM is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
3 - 178
Electrical Specifications*, TA = 25 °C, IF = 1 GHz, LO = +10 dBm
Parameter
Min.
Typ.
Frequency Range, RF
54 - 64
Frequency Range, LO
27 - 32
Frequency Range, IF
DC - 3
Conversion Loss
12.5
1 dB Compression (Input)
-2
Image Rejection
30
LO to RF Isolation
30
LO to IF Isolation
30
IP3 (Input)
7
Amplitude Balance
0.3
Phase Balance
1
* Unless otherwise indicated, all measurements are from probed die
Max.
14
Units
GHz
GHz
GHz
dB
dBm
dB
dB
dB
dBm
dB
Deg
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HMC-MDB218 pdf, 반도체, 판매, 대치품
Outline Drawing
3
v01.0209
HMC-MDB218
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
Pad Number
Function
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Pin Description
Interface Schematic
1, 3 IF1, IF2
This pad is DC coupled.
2 RF This pad is DC coupled and matched to 50 Ohms.
4 LO This pad is DC coupled and matched to 50 Ohms.
3 - 180
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HMC-MDB218 전자부품, 판매, 대치품
v01.0209
HMC-MDB218
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
Wire Bond
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.076mm
(0.003”)
Wire Bond
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
3
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3 - 183

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HMC-MDB218

GaAs MMIC SUB-HARMONIC IRM MIXER

Analog Devices
Analog Devices

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