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HMC6505ALC5 데이터시트 PDF




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부품번호 HMC6505ALC5 기능
기능 GaAs MMIC I/Q UPCONVERTER
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HMC6505ALC5 데이터시트, 핀배열, 회로
v00.1115
Typical Applications
The Hmc6505ALc5 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
• Military Radar, EW & ELINT
• Satellite Communications
• Sensors
Functional Diagram
HMC6505ALC5
GaAs MMIC I/Q UPCONVERTER
5.5 - 8.6 GHz
Features
High Conversion Gain: 15 dB
Sideband Rejection: 22 dBc
LO / RF Rejection: 14 dBc
High Output IP3: +35 dBm
32 Lead 5x5 mm SMT Ceramic Package: 25 mm²
General Description
The Hmc6505ALc5 is a compact GaAs mmic i/q
upconverter in a leadless roHs compliant smT
package. This device provides a small signal con-
version gain of 15 dB with 22 dBc of sideband
rejection. The Hmc6505ALc5 utilizes a rF amplifier
preceded by an i/q mixer where the LO is driven
by a driver amplifier. iF1 and iF2 mixer inputs are
provided and an external 90° hybrid is needed to
select the required sideband. The i/q mixer topology
reduces the need for filtering of the unwanted
sideband. The Hmc6505ALc5 is a much smaller
alternative to hybrid style single sideband upconverter
assemblies and it eliminates the need for wire
bonding by allowing the use of surface mount man-
ufacturing techniques.
LEOlec=t+ri4cadlBSmp,eVcdifdi2c,a3tio=n+s5,VT,AId=d+22+5°ICdd, I3F==132500mMAH,zV,dd1 = +5V, Idd1 = 125 mA [1][2][6]
Parameter
Min.
Typ. Max. Min.
Typ. Max.
Frequency Range, RF
5.5 - 7
7 - 8.6
Frequency Range, LO
5 - 10
6.5 - 11.6
Frequency Range, IF
Conversion Gain [5]
DC - 3
12 15
DC - 3
11 14
Sideband Rejection
18 22
18 22
1 dB Compression (Output)
21
22
IP3 (Output)
LO / RF Rejection [3] [4]
31 35
7 10
31 35
11 14
RF Return Loss
16 17
LO Return Loss
89
IF1 Return Loss
10 10
IF2 Return Loss 8 8
Supply Current Idd1
Supply Current Idd2 + Idd3 [2]
125
120
125
120
[1] Unless otherwise noted all measurements performed with high side LO, IF = 350 MHz and external IF 90° hybrid.
[2] Adjust Vgg between -2 to 0V to achieve Idd2 + Idd3 = 120 mA Typical.
[3] The LO / RF Rejection is defined as the LO signal level at the RF output port relative to the desired RF output signal level.
[4] The LO / RF Rejection data is with IF = -6 dBm.
[5] Data based on subtracting out board loss and loss of hybrid.
[6] +3V can also be used for Vdd1.
Units
GHz
GHz
GHz
dB
dBc
dBm
dBm
dBc
dB
dB
dB
dB
mA
mA
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HMC6505ALC5 pdf, 반도체, 판매, 대치품
v00.1115
Absolute Maximum Ratings
IF Input
LO Input
Vctrl
Vdd1
Vdd2 and Vdd3
Vgg
Channel Temperature
Continuous Pdiss (T = 85°C)
(derate 18.3 mW/°C above 85°C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+20 dBm
+10 dBm
-5V to +0.3V
+5.5V
+5.5V
-3V to 0V
175 °C
1.65 W
54.6 °C/W
-65 to +150 °C
-40 to +85 °C
Class1A
Outline Drawing
HMC6505ALC5
GaAs MMIC I/Q UPCONVERTER
5.5 - 8.6 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1.. PACKAGE BODY MATERIAL: ALUMINA
2.. LEAD AND GROUND PADDLE PLATING: 30 - 80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKLE
3.. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4.. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5.. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6.. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND
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3

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HMC6505ALC5

GaAs MMIC I/Q UPCONVERTER

Analog Devices
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