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HMC8119 데이터시트 PDF




Analog Devices에서 제조한 전자 부품 HMC8119은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 HMC8119 기능
기능 E-Band I/Q Upconverter
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HMC8119 데이터시트, 핀배열, 회로
Data Sheet
81 GHz to 86 GHz,
E-Band I/Q Upconverter
HMC8119
FEATURES
Conversion loss: 10 dB typical
Sideband rejection: 22 dBc typical
Input power for 1 dB compression (P1dB): 16 dBm typical
Input third-order intercept (IP3): 24 dBm typical
Input second-order intercept (IP2): −5 dBm typical
6× local oscillator (LO) leakage at RFOUT: −23 dBm typical
RF return loss: 12 dB typical
LO return loss: 20 dB typical
Die size: 3.601 mm × 1.609 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul
Test and measurement
GENERAL DESCRIPTION
The HMC8119 is an integrated E-band gallium arsenide (GaAs)
pseudomorphic (pHEMT) monolithic microwave integrated
circuit (MMIC), in-phase/quadrature (I/Q) upconverter chip
that operates from 81 GHz to 86 GHz. The HMC8119 provides
a small signal conversion loss of 10 dB with 22 dBc of sideband
rejection across the frequency band. The device uses an image
rejection mixer that is driven by a 6× LO multiplier. Differential
I and Q mixer inputs are provided. The inputs can be driven
with differential I and Q baseband waveforms for direct conver-
sion applications. Alternatively, the inputs can be driven using
an external 90° hybrid and two external 180° hybrids for single-
sideband applications. All data includes the effect of a 1 mil
gold wire wedge bond on the intermediate frequency (IF) ports.
FUNCTIONAL BLOCK DIAGRAM
5 4 IFIP 6
7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
3 IFIN
IFQN
2
IFQP
1
24 23 22
Figure 1.
HMC8119
Rev. A
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Technical Support
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HMC8119 pdf, 반도체, 판매, 대치품
Data Sheet
HMC8119
SPECIFICATIONS
TA = 25°C, IF = 500 MHz, VGMIX = −1 V, VDAMPx = 4 V, VDMULT = 1.5 V, LO = 2 dBm, upper sideband selected (USB). Measurements
performed as an upconverter with external 90° and 180° hybrids at the IF ports, unless otherwise noted.
Table 1.
Parameter
OPERATING CONDITIONS
RF Frequency Range
LO Frequency Range
IF Frequency Range
LO Drive Range
PERFORMANCE
Conversion Loss
Sideband Rejection
Input Power for 1 dB Compression (P1dB)
Input Third-Order Intercept (IP3)
Input Second-Order Intercept (IP2)
6× LO Leakage at RFOUT
RF Return Loss
LO Return Loss
IF Return Loss
POWER SUPPLY
Supply Current
IDAMP1
IDMULT 2
Test Conditions/Comments
Under LO drive
Min
81
11.83
0
2
Typ
10
22
16
24
−5
−23
12
20
25
Max
86
14.33
10
8
13
−19
Unit
GHz
GHz
GHz
dBm
dB
dBc
dBm
dBm
dBm
dBm
dB
dB
dB
175 mA
80 mA
1 Adjust VGAMP from −2 V to 0 V to achieve the total quiescent current, IDAMP = IDAMP1 + IDAMP2 = 175 mA.
2 Adjust VGX2 and VGX3 from −2 V to 0 V to achieve the quiescent current, IDMULT = 1 mA to 2 mA. Refer to the Applications Information section for more information.
Rev. A | Page 3 of 27

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HMC8119 전자부품, 판매, 대치품
HMC8119
INTERFACE SCHEMATICS
IFIN, IFIP,
IFQN, IFQP
200
Figure 3. IFIP, IFIN, IFQN, IFQP Interface
GND
Figure 4. GND Interface
VDAMP1, VDAMP2,
VDMULT
100
VGMIX, VGAMP,
VGX2, VGX3
Figure 5. VGMIX, VDAMP1, VDAMP2, VDMULT, VGAMP, VGX2, VGX3 Interface
Data Sheet
LOIN
Figure 6. LOIN Interface
RFOUT
Figure 7. RFOUT Interface
Rev. A | Page 6 of 27

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