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PDF HMC8118 Data sheet ( Hoja de datos )
| Número de pieza | HMC8118 | |
| Descripción | E-Band I/Q Upconverter | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
FEATURES
Conversion loss: 11 dB typical
Sideband rejection: 33 dBc typical
Input power for 1 dB compression (P1dB): 14 dBm typical
Input third-order intercept (IP3): 22 dBm typical
Input second-order intercept (IP2): −5 dBm typical
6× local oscillator (LO) leakage at RFOUT: −27 dBm typical
RF return loss: 6 dB typical
LO return loss: 18 dB typical
Die size: 3.601 mm × 1.609 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul
Test and measurement
71 GHz to 76 GHz,
E-Band I/Q Upconverter
HMC8118
GENERAL DESCRIPTION
The HMC8118 is an integrated E-band gallium arsenide (GaAs)
monolithic microwave integrated circuit (MMIC) in-phase/
quadrature (I/Q) upconverter chip that operates from 71 GHz
to 76 GHz. The HMC8118 provides a small signal conversion
loss of 11 dB with 33 dBc of sideband rejection across the
frequency band. The device uses an image rejection mixer that
is driven by a 6× LO multiplier. Differential I and Q mixer inputs
are provided. The inputs can be driven with differential I and Q
baseband waveforms for direct conversion applications.
Alternatively, the inputs can be driven using an external 90°
hybrid and two external 180° hybrids for single sideband
applications. All data includes the effect of a 1 mil gold wire
wedge bond on the intermediate frequency (IF) ports.
FUNCTIONAL BLOCK DIAGRAM
56
4 IFIP
7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
3 IFIN
2 IFQN
1 IFQP
24 23 22
Figure 1.
6×
HMC8118
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC8118
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage
VDAMP1, VDAMP2
VDMULT
Gate Bias Voltage
VGAMP
VGX2, VGX3
VGMIX
LO Input Power
Maximum Junction Temperature
(to Maintain 1 Million Hours Mean
Time to Failure (MTTF))
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity (Human Body Model)
Rating
4.5 V
3V
−3 V to 0 V
−3 V to 0 V
−3 V to 0 V
10 dBm
175°C
−65°C to +150°C
−55°C to +85°C
100 V (Class 0)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
THERMAL RESISTANCE
Table 3. Thermal Resistance
Package Type
24-Pad Bare Die [CHIP]
θJC1 Unit
73.7 °C/W
1 Based on ABLEBOND® 84-1LMIT as die attach epoxy with thermal
conductivity of 3.6 W/mK.
ESD CAUTION
Rev. A | Page 4 of 27
5 Page 
HMC8118
LOWER SIDEBAND (LSB) SELECTED, IF = 500 MHz
0
TA = +25°C
–2 TA = +85°C
TA = –55°C
–4
–6
–8
–10
–12
–14
–16
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 24. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, LSB
–5
–10 TA = +25°C
TA = +85°C
–15 TA = –55°C
–20
–25
–30
–35
–40
–45
–50
–55
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 25. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, LSB
30
28 TA = +25°C
TA = +85°C
26 TA = –55°C
24
22
20
18
16
14
12
10
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 26. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, LSB
Data Sheet
0
–2
LO = –4dBm
LO = –2dBm
LO = 0dBm
–4 LO = +2dBm
LO = +4dBm
–6
LO = +6dBm
LO = +8dBm
–8
–10
–12
–14
–16
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 27. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, LSB
–5
LO = –4dBm
–10 LO = –2dBm
LO = 0dBm
–15 LO = +2dBm
LO = +4dBm
–20 LO = +6dBm
LO = +8dBm
–25
–30
–35
–40
–45
–50
–55
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 28. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, LSB
30
28
26
24
22
20
18 LO = –4dBm
LO = –2dBm
16 LO = 0dBm
LO = +2dBm
14 LO = +4dBm
LO = +6dBm
12 LO = +8dBm
10
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 29. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, LSB
Rev. A | Page 10 of 27
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet HMC8118.PDF ] | |
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