|
|
PDF NJG1145UA2 Data sheet ( Hoja de datos )
| Número de pieza | NJG1145UA2 | |
| Descripción | WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC | |
| Fabricantes | New Japan Radio | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NJG1145UA2 (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
|
No Preview Available !
NJG1145UA2
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
The NJG1145UA2 is a fully matched wide band low noise
amplifier GaAs MMIC for terrestrial and satellite applications.
To achieve wide dynamic range, the NJG1145UA2 offers high
gain mode and low gain mode. Selecting high gain mode for weak
signals, the NJG1145UA2 helps improve receiver sensitivity
through high gain and low noise figure. Selecting low gain mode
for strong signals, it bypasses LNA circuit to offer higher linearity.
In high gain mode, the NJG1145UA2 achieves high gain and
high IIP3 across the band.
The ESD protection circuits are integrated into the MMIC. They
achieve high ESD protection voltage.
An ultra-small and ultra-thin package of EPFFP6-A2 is adopted.
I PACKAGE OUTLINE
NJG1145UA2
I APPLICATION
Terrestrial and Satellite applications from 90MHz to2150MHz
Digital TV, CATV, BS/CS and Set-top box
LTE Router, modem and Base Station
I FEATURES
G Wide operating frequency range 90MHz~2150MHz
G Low voltage operation
2.8V typ.
G External components count
3pcs. (capacitor: 2pcs, inductor: 1pc)
G Small package size
EPFFP6-A2 (package size: 1.0mmx1.0mmx0.37mm typ.)
[High gain mode]
G Current consumption
20mA typ.
G High gain
+15.0dB typ.
G Low noise figure
1.5dB typ.
[Low gain mode]
G Low current consumption
11µA typ.
G Gain(Low loss)
-1.0dB typ.
I PIN CONFIGURATION
(Top View)
RFIN 5 GND
VCTL
64
Logic
circuit
Bypass circuit
1PIN INDEX
LNA circuit
Bias
circuit
1
GND
GND 2
3
RFOU
Pin Connection
1. GND
2. GND
3. RFOUT
4. VCTL
5. GND
6. RFIN
I TRUTH TABLE
VCTL
H
L
“H”=VCTL(H)“L”=VCTL(L)
LNA ON
Bypass
ON
OFF
OFF
ON
LNA mode
High Gain mode
Low Gain mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-17
-1-
1 page  
NJG1145UA2
I TERMINAL INFORMATION
No. SYMBOL
DESCRIPTION
1
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
2
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
RF output terminal. This terminal doubles as the drain terminal of the
3 RFOUT LNA. Please connect this terminal to the power supply(VDD) via
inductor(L1).
4 VCTL Control voltage terminal.
5
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
6 RFIN RF input terminal. This IC integrates an input DC blocking capacitor.
-5-
5 Page 
NJG1145UA2
I ELECTRICAL CHARACTERISTICS (Hgih Gain mode)
Conditions: VDD=2.8V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit
- 11 -
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet NJG1145UA2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NJG1145UA2 | WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC | New Japan Radio |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |