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Datasheet CYUSB2024 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CYUSB2024 | USB and Mass Storage Peripheral Controller CYUSB202X SD2™ USB and Mass Storage Peripheral Controller
Features
■ Latest-generation storage support ❐ SD2.0/SDXC – UHS1 SDR50 / DDR50 Master ❐ eMMC 4.4 Master ❐ SDIO 3.0 Master
■ USB integration ❐ Certified USB 2.0 peripheral: Hi-Speed (HS), and Full-Speed (FS) only) ❐ Thirty-t | Cypress Semiconductor | controller |
CYU Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CYU01M16SCCU | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SCCU MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • 16-word Pag Cypress Semiconductor data | | |
2 | CYU01M16SCE | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SCE MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic po Cypress Semiconductor data | | |
3 | CYU01M16SCG | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SCG MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic po Cypress Semiconductor data | | |
4 | CYU01M16SFCU | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SFCU MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18mA @ f = fmax • Ultra low standby power • 16-word Pag Cypress Semiconductor data | | |
5 | CYU01M16SFE | 16-Mbit (1M x 16) Pseudo Static RAM CYU01M16SFE MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down whe Cypress Semiconductor data | | |
6 | CYU01M16ZCC | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16ZCC MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • 16-word Page Cypress Semiconductor data | | |
7 | CYU01M16ZFC | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16ZFC MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • 16-word Pag Cypress Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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