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부품번호 | FQU4N60 기능 |
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기능 | 600V 4A N-Channel MOSFET | ||
제조업체 | Oucan Semi | ||
로고 | |||
전체 6 페이지수
FQD4N60/FQI4N60/FQU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The FQD4N60 & FQI4N60 & FQU4N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
700V@150℃
4A
< 2.3Ω
TO252
DPAK
Top View
Bottom View
DD
Top View
TO251A
IPAK
Bottom View
TO251
Top View
Bottom View
D
S
G
G
S
S
D
G
G
D
S
S
D
G
AOD4N60
AOI4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOU4N60
Maximum
600
±30
4
2.6
14
2.8
118
235
50
5
104
0.83
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
43
-
1
Maximum
55
0.5
1.2
G
SD G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10000
12
VDS=480V
ID=2A
1000
Ciss
9 Coss
100
6
3
0
0 3 6 9 12 15
Qg (nC)
Figure 7: Gate-Charge Characteristics
18
10
Crss
1
0.1 1 10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100 800
10
RDS(ON)
1
0.1
TJ(Max)=150°C
DC
10µs
100µs
1ms
10ms
0.01
1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
600 TJ(Max)=150°C
TC=25°C
400
200
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
Page 4 of 6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FQU4N60.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FQU4N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQU4N60 | 600V 4A N-Channel MOSFET | Oucan Semi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |