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부품번호 | FQU4N60 기능 |
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기능 | 600V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FQU4N60
600V N-Channel MOSFET
Features
• 2.6A, 600V @TJ = 25°C
• Typ. RDS(on) = 1.0Ω
• Low gate charge (typical 12.8nC)
• Low effective output capacitance (typ ical 32pF)
• 100% avalanche tested
• Improved dv/dt capability
November 2002
QFET TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
Minimize on-state resistance,provide superior switching
Performance, and withstand high energy pulse in the
Avalanche and commutation mode. These devices are well
Suited for high efficiency switch mode power supply,power
Factor correction, electronic lamp ballast on half bridge.
D
GDS
I-PAK
FQU Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002Fairchild Semiconductor Corporation
FQU4N60 Rev. A
1
G
S
FQU4N60
600
2.6
1.64
11
± 30
180
2.6
4.5
4.5
50
0.4
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQU4N60
2.7
110
Unit
°C/W
°C/W
www.fairchildsemi.com
Typical Performance Characteristics(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
*Notes :
1. VGS = 0 V
2. ID = 250μA
-50 0
50 100
TJ, Junction Temperature [ Cο ]
150
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-50 0 50 100
TJ, Junction Temperature [ C]o
*Notes :
1. VGS = 10 V
2. ID = 2.0 A
150 200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
10 1
10 0
10 -1
* Notes :
o1. TC = 25 C
2. TJ = 150 C o
3. Single Pulse
10 us
100 us
1 ms
10 ms
DC
10 0 10 1 10 2
VDS, Drain-Source Voltage [V]
10 3
4
3
2
1
0
25 50 75 100 125
TC, Case Temperature [ C]o
150
Figure 11-1. Transient Thermal Response Curve
FQU4N60 Rev. A
D = 0 .5
10 0
0 .2
0 .1
0 .0 5
10 -1
0 .0 2
0 .0 1
sin g le p u lse
* N o te s :
1 . Z θ J C (t) = 2 .5 Co/W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
PDM
t1
t2
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
10 0
10 1
4
www.fairchildsemi.com
4페이지 Package Dimensions
Mechanical Dimensions
(0.50)
6.60 ±0.20
5.34 ±0.20
(4.34)
IPAK
I-PAK
(0.50)
2.30 ±0.20
0.50 ±0.10
MAX0.96
0.76 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.50 ±0.10
FQU4N60 Rev. A
FQU4N60 Rev. B
7 www.fairchildsemi.com
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQU4N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQU4N60 | 600V 4A N-Channel MOSFET | Oucan Semi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |